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| BCM846S NPN Silicon AF Transistor Array 4 5 6 For current mirror applications Low collector-emitter saturation voltage Two (galvanic) internal isolated Transistors Complementary type: BCM856S C1 6 B2 5 E2 4 TR2 TR1 1 E1 2 B1 3 C2 EHA07178 Type BCM846S Maximum Ratings Parameter Marking Pin Configuration Package 1Ms 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Total power dissipationTS = 115 C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point1) 1For calculation of R thJA please refer to Application Note Thermal Resistance Precision matched transistor pair: IC 10% 2 1 3 VPS05604 Symbol VCEO VCES VCBO VEBO IC ICM Ptot Tj Tstg Symbol RthJS Value 65 80 80 6 100 200 250 150 -65 ... 150 Unit V mA mW C Value Unit 140 K/W 1 Aug-30-2002 BCM846S Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. DC Characteristics typ. max. Unit Collector-emitter breakdown voltage IC = 10 mA, IB = 0 A V(BR)CEO V(BR)CBO V(BR)CES V(BR)EBO ICBO 65 80 80 6 - - V Collector-base breakdown voltage IC = 10 A, IE = 0 A Collector-emitter breakdown voltage IC = 10 A, VBE = 0 A Emitter-base breakdown voltage IE = 10 A, IC = 0 A Collector-base cutoff current VCB = 30 V, IE = 0 A VCB = 30 V, IE = 0 A, TA = 150 C nA 250 290 90 200 700 900 660 15 5 200 450 mV 300 650 750 820 % DC current gain-1) IC = 10 A, VCE = 5 V IC = 2 mA, VCE = 5 V hFE Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VCEsat Base emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat VBE(ON) mV mV Base-emitter voltage-1) IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V IB = 1 A, VCE1 = VCE2 = 1.0V IB = 100 A, VCE1 = VCE2 = 1.0V 1Puls 580 IC test: t < 300s; D < 2% 2 Matching -10 -10 10 10 Aug-30-2002 BCM846S Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values min. AC Characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz Open-circuit reverse voltage transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz Short-circuit forward current transf. ratio IC = 2 mA, VCE = 5 V, f = 1 kHz IC = 2 mA, VCE = 5 V, f = 1 kHz Noise figure IC = 200 A, VCE = 5 V, f = 1 kHz, f = 200 Hz, RS = 2 k F 10 Open-circuit output admittance h21e h22e 330 30 S h12e 2 10-4 h11e 4.5 k Ceb 10 Ccb 2 pF fT 250 MHz typ. max. Unit 3 Aug-30-2002 dB BCM846S Collector-base capacitance CCB = Emitter-base capacitance CEB= BC 846...850 (VEB0) 300 C CB0 ( C EB0 ) 12 pF 10 EHP00361 mW C EB P tot 8 200 6 150 4 100 C CB 50 2 0 10 -1 5 10 0 V VCB0 10 1 (VEB0 ) 0 0 20 40 60 80 100 10 3 K/W 10 3 10 2 Ptotmax/P totDC - RthJS 10 2 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 tp 4 Permissible Pulse Load RthJS = (tp ) Permissible Pulse Load Ptotmax/PtotDC = (tp) D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 -4 10 -3 10 -2 Aug-30-2002 (VCB0) Total power dissipation Ptot = (TS ) 120 C 150 TS s 10 0 tp BCM846S Transition frequency fT = VCE = 5 V 10 3 MHz (IC ) Base-emitter saturation voltage EHP00363 10 2 fT 5 C mA 100 C 25 C -50 C 10 1 5 10 2 5 10 0 5 10 1 10 -1 5 10 0 5 10 1 mA 10 2 10 -1 C IC = (VCEsat), hFE = 20 10 2 EHP00367 10 -1 A 5V 1V C mA 100 C 25 C -50 C IC 10 -2 10 1 5 10 -3 10 -4 10 5 0 10 -5 10 -1 0 0.1 0.2 0.3 0.4 V 0.5 VCEsat 10 -6 0.4 0.5 0.6 0.7 5 Collector-emitter saturation voltage Collector current IC = IC = (VBEsat ), hFE = 20 EHP00364 0 0.2 0.4 0.6 0.8 V 1.2 V BEsat (VBE ) 0.8 V 1 VBE Aug-30-2002 BCM846S DC current gain hFE = VCE = 5V 10 3 EHP00365 15 mA h FE 5 100 C 25 C 12 11 IB = 40 uA IB = 36 uA IB = 32 uA IB = 28 uA IB = 24 uA IB = 20 uA IB = 16 uA IB = 12 uA IB = 8 uA IB = 4uA 10 2 5 -50 C IC 10 9 8 7 6 10 1 5 5 4 3 2 1 10 0 10 -2 5 10 -1 5 10 0 5 10 1 mA 10 2 0 0 1 2 3 C VCBO = 30 V 10 4 nA CB0 10 3 5 10 2 5 10 1 5 10 5 10 -1 0 max typ 0 50 100 Collector cutoff current ICBO = (TA) EHP00381 C TA 150 6 (IC) Output characteristics IC = (VCE), IB = parameter V 5 VCE Aug-30-2002 BCM846S Definition of matching IC = (IC2-IC1)/IC1 6 5 4 T1 T2 1 2 3 Ib Ic 1 Vce1 Vce2 Ic 2 7 Aug-30-2002 |
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